JPH0439775B2 - - Google Patents
Info
- Publication number
- JPH0439775B2 JPH0439775B2 JP59180361A JP18036184A JPH0439775B2 JP H0439775 B2 JPH0439775 B2 JP H0439775B2 JP 59180361 A JP59180361 A JP 59180361A JP 18036184 A JP18036184 A JP 18036184A JP H0439775 B2 JPH0439775 B2 JP H0439775B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductivity type
- channel
- supply layer
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 29
- 230000000295 complement effect Effects 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 15
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 8
- 230000012010 growth Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 125000005842 heteroatom Chemical group 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004047 hole gas Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
Landscapes
- Bipolar Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59180361A JPS6159875A (ja) | 1984-08-31 | 1984-08-31 | 相補型半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59180361A JPS6159875A (ja) | 1984-08-31 | 1984-08-31 | 相補型半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6159875A JPS6159875A (ja) | 1986-03-27 |
| JPH0439775B2 true JPH0439775B2 (en]) | 1992-06-30 |
Family
ID=16081899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59180361A Granted JPS6159875A (ja) | 1984-08-31 | 1984-08-31 | 相補型半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6159875A (en]) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2549795B2 (ja) * | 1992-03-17 | 1996-10-30 | 株式会社東芝 | 化合物半導体集積回路及びその製造方法 |
| US7119381B2 (en) * | 2004-07-30 | 2006-10-10 | Freescale Semiconductor, Inc. | Complementary metal-oxide-semiconductor field effect transistor structure having ion implant in only one of the complementary devices |
-
1984
- 1984-08-31 JP JP59180361A patent/JPS6159875A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6159875A (ja) | 1986-03-27 |
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